Electrolyte-gated transistors (EGTs) have emerging applications in physiological recording, neuromorphic computing, sensing, and {flexible|versatile} printed electronics. A challenge for these devices is their slow switching speed, which has {several|a number of|numerous|many|various|quite a few} causes. {Here|Right here} we report the fabrication and characterization of n-type ZnO-based EGTs with signal propagation delays as {short|brief|quick} as 70 ns. Propagation delays are assessed in dynamically operating inverters and {five|5} stage ring oscillators as a function of channel dimensions and {supply|provide} voltages {up to|as much as} 3V. Substantial decreases in switching time are realized by minimizing parasitic resistances and capacitances {that are|which are|which can be|which might be|that happen to be} {associated with|related to|connected with|linked to} the electrolyte in these devices. {Stable|Steady} switching at 1-10 MHz is {achieved|accomplished} in {individual|person} inverter stages with 10-40 mm channel lengths, and {analysis|evaluation} suggests that {further|additional} improvements are {possible|feasible|achievable|attainable|doable|probable}. 37342-97-5 site AN-12-H5 intermediate-1 Price PMID:35901518
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